TSM3400 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 28 @ VGS = 10V 5.8 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3400CX RF SOT-23 3Kpcs / 7" Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V ID 5.8 A IDM 30 A IS 2.5 A Maximum Power Dissipation @ Ta = 25 C PD 1.4 W Operating Junction Temperature TJ +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Operating Junction and Storage Temperature Range Thermal Performance Parameter Junction to Foot Thermal Resistance RJF Junction to Ambient Thermal Resistance (PCB mounted) RJA 70 90 Unit o C/W o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. 1/1 Version: A09 TSM3400 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250A VGS(TH) 0.7 -- 1.4 V Gate Body Leakage VGS = 12V, VDS = 0V IGSS -- -- 100 nA Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1.0 A On-State Drain Current VDS = 5V, VGS = 4.5V ID(ON) 20 -- -- A -- 23 28 -- 28 33 -- 43 52 VGS = 10V, ID = 5.8A Drain-Source On-State Resistance VGS = 4.5V, ID = 5A RDS(ON) VGS = 2.5V, ID = 4A m Forward Transconductance VDS = 5V, ID = 5A gfs 10 15 -- S Diode Forward Voltage IS = 1.0A, VGS = 0V VSD -- 0.76 1.0 V Qg -- 9.7 12 Qgs -- 1.63 -- Qgd -- 3.1 -- Ciss -- 857 1030 Coss -- 97 -- Crss -- 71 -- td(on) -- 3.3 5 tr -- 4.7 7 td(off) -- 26 39 -- 4.1 6.2 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 15V, ID = 5.8A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 1.8, ID = 1A, VGEN = 10V, RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/2 nS Version: A09 TSM3400 30V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/3 Version: A09 TSM3400 30V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/4 Version: A09 TSM3400 30V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5 10 5 10 Marking Diagram 40 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/5 Version: A09 TSM3400 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A09